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Tag Archives: write endurance
Graphene Flash Memory
I have been thinking about writing a post on “Is Flash Dead?” for a while now. Well at least since talking with IBM research a couple of weeks ago on their new memory technologies that they have been working on. … Continue reading
Posted in Data, Data density, Data integrity, Data retention, SSD storage, Storage, storage economics, Storage energy use, Storage longevity, Storage reliability, Strategic Inflection Points, System effectiveness, Uncategorized
Tagged cell-to-cell interaction, circuit size, feram, Ferro-electric RAM, Flash at 11nm, Graphene Flash Memory, IBM Almaden lab, IBM Research, Magnetic RAM, MRAM, NAND Flash problems, pcm, Phase Change Memory, racetrack memory, SSD, write endurance
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Toshiba studies laptop write rates confirming SSD longevity
Today Toshiba announced a new series of SSD drives based on their 32NM MLC NAND technology. The new technology is interesting but what caught my eye was another part of their website, i.e., their SSD FAQs. We have talked about … Continue reading
Posted in Storage, Storage reliability
Tagged drive reliability, Flash, laptop user, MLC NAND, SSD, Toshiba, write endurance
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